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Updated: Jan 10, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Atomically Resolved Electron Reflectivity at a Metal/Semiconductor Interface

Ding-Ming Huang1,2,3, Jian-Huan Wang1,2,3, Jie-Yin Zhang2

  • 1Beijing Academy of Quantum Information Sciences, Beijing, 100193, China.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|November 29, 2025
PubMed
Summary

Researchers achieved an atomically flat aluminum/germanium interface using molecular beam epitaxy. Scanning tunneling microscopy revealed periodic electron reflectivity changes, indicating local electronic states at the interface.

Keywords:
coherent tunnelinginterfacial characterizationinterfacial scatteringmetal/semiconductor interfacequantum wellscanning tunneling microscopy

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