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Room-temperature valley-selective emission in Si-MoSe2 heterostructures enabled by high-quality-factor chiroptical
Feng Pan1, Xin Li2, Amalya C Johnson3
1Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA. fpan22@stanford.edu.
Nature Communications
|November 29, 2025
Summary
Researchers developed a chiral metasurface for room-temperature valley-selective light emission in molybdenum diselenide (MoSe2) monolayers. This breakthrough overcomes valley-dephasing challenges, paving the way for advanced valleytronic devices and chiral light sources.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanophotonics
Background:
- Transition metal dichalcogenides (TMDs) offer valley pseudospin for quantum information processing.
- Valley-dephasing hinders room-temperature operation of valleytronic devices.
Purpose of the Study:
- To demonstrate room-temperature valley-selective emission in MoSe2 monolayers.
- To overcome limitations of valley-dephasing in TMDs.
Main Methods:
- Fabrication of silicon chiral metasurfaces with high Q-factors.
- Utilizing chiral near-field enhancement for valley manipulation.
- Measuring degrees of circular polarization (DOP) at room temperature.
Main Results:
- Achieved record high DOP of 0.5 at room temperature.
- Demonstrated valley-selective emission independent of excitation polarization.
- Observed a ~13-fold enhancement in valley-specific radiative transition rates.
Conclusions:
- Chiral resonant metasurfaces enable robust room-temperature valley control in TMDs.
- The platform enhances the chiroptical local density of states, boosting valley emission.
- This work facilitates the development of compact chiral light sources for classical and quantum applications.
