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Carrier Generation and Recombination

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...

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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

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Reprogrammable Carrier Lifetimes in 2D Materials via Ultrafast Ferroelectric Switching.

Dongqi Yao¹, Zhi-Guo Tao¹, Changwei Zhang¹

¹Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Institute of Computational Physical Sciences and Department of Physics, Fudan University, Shanghai 200433, China.

Journal of the American Chemical Society

|December 2, 2025

Summary

Sliding ferroelectricity in 2D materials dynamically controls carrier lifetimes by modulating polarization. This breakthrough enables reversible tuning of optoelectronic device performance, paving the way for adaptive functionalities.

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Area of Science:

Materials Science
Condensed Matter Physics
Quantum Chemistry

Background:

Carrier lifetime is crucial for optoelectronic device efficiency.
Controlling carrier dynamics in conventional materials is limited.
Sliding ferroelectricity in 2D van der Waals materials offers novel modulation via interlayer translation.

Purpose of the Study:

Investigate how spontaneous polarization in sliding ferroelectrics affects carrier recombination.
Explore the potential for dynamic and reversible control of carrier lifetimes.
Demonstrate a practical method for achieving this control in optoelectronic devices.

Main Methods:

Ab initio nonadiabatic molecular dynamics simulations.
Studied bilayer boron nitride (BN) and tungsten diselenide (WSe2).
Analyzed the impact of polarization on electronic states and carrier recombination.

Main Results:

Spontaneous polarization suppresses electron-hole overlap, prolonging carrier lifetimes.
Defects in ferroelectrics show bidirectional carrier lifetime tunability via polarization switching.
A combination of photoexcitation and electric field enables ultrafast polarization reversal.

Conclusions:

Sliding ferroelectricity provides active, on-demand control over carrier dynamics.
This approach allows materials to be optimized for conflicting device requirements.
Enables the development of multifunctional optoelectronics with reprogrammable carrier dynamics.