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Room-temperature single-photon emission from β-Ga2O3.
Yiming Shi1,2, Zhengchang Xia2,3, Junhua Meng4
1School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, PR China.
Nature Communications
|December 2, 2025
Summary
Researchers demonstrate room-temperature single-photon emission from beta-gallium oxide (β-Ga2O3), a novel ultrawide bandgap semiconductor. This breakthrough paves the way for advanced quantum technologies and on-chip integrated devices.
Area of Science:
- Quantum Information Science
- Materials Science
- Semiconductor Physics
Background:
- Wide bandgap semiconductors host single-photon emitters (SPEs) for room-temperature quantum applications.
- Beta-phase gallium oxide (β-Ga2O3) is an ultrawide bandgap semiconductor with potential but lacks reported SPEs.
Purpose of the Study:
- To demonstrate room-temperature photostable single-photon emission from β-Ga2O3.
- To characterize the photophysical properties of these emitters.
- To identify the underlying defect responsible for SPEs in β-Ga2O3.
Main Methods:
- Experimental investigation of SPEs in various β-Ga2O3 samples (homoepitaxial, heteroepitaxial, commercial wafers).
- Characterization of emitter properties: purity, brightness, linear polarization.
- First-principles calculations to identify the defect responsible for SPEs.
Main Results:
- Successful demonstration of room-temperature photostable single-photon emission from β-Ga2O3.
- SPEs exhibit high purity, brightness, and linear polarization.
- First-principles calculations identify a localized neutral divacancy defect as the origin of SPEs.
Conclusions:
- Room-temperature SPEs in β-Ga2O3 are achieved, overcoming previous limitations.
- The identified divacancy defect offers a pathway for controlled SPE generation.
- High-performance SPEs in β-Ga2O3 are promising for on-chip quantum devices and technologies.
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