Related Experiment Video
Updated: Jan 9, 2026

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
Published on: December 27, 2012
17-GHz lossless InP-membrane active metasurface
Taichiro Fukui1, Kei Sumita1, Hiroki Miyano1
1Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
Abstract:
High-speed active metasurfaces enable spatiotemporal light control within an ultrathin device layer, offering previously unexplored possibilities for optical communication, sensing, and computing. However, a trade-off between electrical conductivity and optical loss has hindered the realization of a high-speed, low-loss device. Here, we experimentally demonstrate an active metasurface operating at 1.5-μm wavelength range that achieves a record-high 17.5-GHz modulation bandwidth while maintaining a high quality (Q) factor of 102 and an ultralow optical loss of 0.56 dB. This is enabled by the indium phosphide (InP) membrane platform, where n-InP offers high electron mobility and low free-carrier absorption simultaneously. A high-Q Friedrich-Wintgen quasi-bound-state-in-the-continuum mode within the InP-membrane high-contrast grating (InP HCG) traps light in the organic electro-optic material for efficient modulation. The InP HCG also functions as an ultralow-resistance interdigitated electrode, enabling 50-fold faster modulation than silicon-based counterparts. Our work paves the way toward active metasurfaces for high-speed spatiotemporal light control beyond the GHz regime.
Related Concept Videos
Insensitive Nuclei Enhanced by Polarization Transfer (INEPT)
Magnetic Damping
If, however, the bob is a slotted metal plate, the magnet produces a much smaller effect. When a slotted metal plate enters the field, an emf is induced by the change in flux; however, it is less effective because the slots limit the...
Standing Waves in a Cavity
¹³C NMR: Distortionless Enhancement by Polarization Transfer (DEPT)
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Plane Electromagnetic Waves II

