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Topotactic Conversion of Two-Dimensional WSe2 into Atomically Thin Nonlayered Metal Nitrides
Wenjun Liu1, Tao Zhang1, Canlei Wu1
1Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
ACS Applied Materials & Interfaces
|December 5, 2025
Summary
Researchers developed a scalable method to create single-crystal, atomically thin nonlayered tungsten dinitride (WN2) from tungsten diselenide (WSe2). This breakthrough enables new applications in electronics and catalysis.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Atomically thin materials research has focused on van der Waals layered structures.
- Nonlayered materials exhibit unique properties at the atomic scale but lack scalable synthesis methods for single crystals.
Purpose of the Study:
- To develop a scalable synthesis technique for atomically thin, nonlayered tungsten dinitride (WN2) single crystals.
- To explore the properties and applications of WN2.
Main Methods:
- Topotactic synthesis using van der Waals layered tungsten diselenide (WSe2) as a precursor.
- Utilizing an h-BN mask for spatially controlled conversion.
- Fabrication of lateral WN2-WSe2 heterojunctions.
Main Results:
- Successfully synthesized single-crystal, atomically thin WN2 from WSe2.
- Achieved high single crystallinity and nitrogen-rich composition in WN2.
- Demonstrated enhanced on-off ratios in lateral WN2-WSe2 heterojunctions compared to Pt/WSe2 contacts.
- Observed improved electrocatalytic activity for the hydrogen evolution reaction (HER) in WN2.
Conclusions:
- The topotactic approach provides a scalable route to atomically thin nonlayered materials.
- WN2 shows promise for next-generation transitional metal nitride (TMN)-based electronics.
- WN2 exhibits potential as an advanced catalyst for HER.
