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Superconductivity and suppressed monoclinic distortion in FeTe films enabled by higher-order epitaxy
Yuki Sato1, Soma Nagahama2, Shunsuke Kitou3
1RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan. yuki.sato.yj@riken.jp.
Nature Communications
|December 5, 2025
Summary
Higher-order epitaxy enables unique 2D superconductivity in iron telluride (FeTe) films. This method controls material properties by leveraging lattice mismatches, opening new avenues for emergent phenomena in thin films.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Thin Film Growth
Background:
- Epitaxy typically requires matching lattice constants between films and substrates to minimize defects.
- Significant lattice mismatches can lead to higher-order epitaxy, a less explored growth mode.
- Higher-order epitaxy offers potential for novel material properties and emergent phenomena.
Purpose of the Study:
- To explore the application of higher-order epitaxy for growing single-crystalline iron telluride (FeTe) films.
- To investigate the structural and electronic properties of FeTe films grown with a specific higher-order commensurate ratio (6:5).
- To demonstrate the potential of higher-order epitaxy in controlling material properties and inducing superconductivity.
Main Methods:
- Molecular beam epitaxy (MBE) for thin film deposition.
- Scanning transmission electron microscopy (STEM) for interface analysis.
- Synchrotron X-ray diffraction (XRD) for structural characterization.
Main Results:
- Successfully grew single-crystalline FeTe films on CdTe(001) substrates using 6:5 commensurate higher-order epitaxy.
- Observed self-organized periodic interstitials at the film-substrate interface due to higher-order lattice matching.
- Found that the tetragonal-to-monoclinic structural transition in FeTe is suppressed in the grown films.
- Demonstrated substrate-selective two-dimensional superconductivity in the FeTe films, attributed to suppressed monoclinic distortion.
Conclusions:
- Higher-order epitaxy is a viable technique for fabricating high-quality thin films with controlled structures.
- The 6:5 commensurate epitaxy approach effectively suppresses detrimental structural transitions in FeTe.
- This method provides a pathway to engineer emergent phenomena like two-dimensional superconductivity through precise lattice control.

