Valley splitting and anomalous valley Hall effect in MoTe₂/CrSCl heterostructure

Area of Science:

• Condensed Matter Physics
• Materials Science
• Quantum Technologies

Background:

• Two-dimensional (2D) valleytronics harnesses the valley degree of freedom for advanced information processing.
• Lifting valley degeneracy is crucial for valleytronics, with magnetic proximity effects offering a viable solution.

Purpose of the Study:

• To demonstrate and investigate valley splitting in a MoTe₂/CrSCl heterostructure.
• To explore the mechanisms governing valley physics at the interface and the potential for valley-selective charge transport.

Main Methods:

• First-principles calculations were employed to study the electronic and magnetic properties of the MoTe₂/CrSCl heterostructure.
• The effects of in-plane tensile strain and out-of-plane electric fields on valley splitting were investigated.

Main Results:

• Substantial valley splitting of 63 meV was achieved at the valence band maximum under specific strain and electric field conditions.
• Interlayer charge transfer and interfacial orbital hybridization were identified as key factors influencing valley physics.
• Hole doping and a significant Berry curvature at the K valley were observed, leading to an electrically tunable anomalous valley Hall effect.

Conclusions:

• The MoTe₂/CrSCl heterostructure serves as a promising platform for achieving significant valley splitting.
• The findings establish a pathway for electrically tunable valley-selective charge transport, crucial for future valleytronic device applications.