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Related Concept Videos

MOSFET01:16

MOSFET

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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
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Biasing of FET01:22

Biasing of FET

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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
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Characteristics of MOSFET01:17

Characteristics of MOSFET

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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Field Effect Transistor01:29

Field Effect Transistor

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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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DFT coupled with NEGF study of N-type MOSFET based on 2D Bi2C3semiconductor.

Yongjun Huang1, Jialin Yang1, Weicong Sun1

  • 1Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China.

Nanotechnology
|December 8, 2025
PubMed
Summary

Two-dimensional bismuth carbide (Bi2C3) shows promise for future electronics. This novel semiconductor exhibits excellent performance metrics, meeting International Technology Roadmap for Semiconductors targets for high-performance integrated circuits.

Keywords:
2D materialsbismuth carbide (Bi2C3)field-effect transistorsfirst-principles calculationsnon-equilibrium green’s function

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Silicon-based Field-Effect Transistors (FETs) are approaching fundamental scaling limits.
  • Two-dimensional (2D) materials offer potential solutions to overcome short-channel effects and reduce power consumption in advanced transistors.
  • Novel 2D materials are continuously being explored for next-generation semiconductor devices.

Purpose of the Study:

  • To comprehensively investigate the electronic and transport properties of the novel 2D bismuth carbide (Bi2C3) semiconductor.
  • To evaluate the potential of monolayer Bi2C3 as a channel material for high-performance Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs).
  • To assess the device performance against the International Technology Roadmap for Semiconductors (ITRS) specifications.

Main Methods:

  • First-principles density functional theory (DFT) calculations were employed to determine the electronic band structure of monolayer Bi2C3.
  • Non-equilibrium Green's function (NEGF) quantum transport simulations were utilized to model the performance of Bi2C3-based FETs.
  • Device simulations were conducted for various channel lengths, including 10 nm and 5 nm.

Main Results:

  • Monolayer Bi2C3 exhibits a moderate direct bandgap, a sharp conduction band, and a low electron effective mass (0.48m0).
  • Bi2C3 FETs achieved an ultra-high on-state current (Ion) of 2540 μA/μm with an on/off ratio exceeding 10^4 for a 10 nm channel.
  • Devices demonstrated fast switching speeds, low power-delay (τ), and excellent energy-delay product, meeting ITRS high-performance targets across scaled channel lengths.

Conclusions:

  • Monolayer Bi2C3 is a highly competitive candidate material for future high-performance integrated circuits.
  • The comprehensive performance metrics of Bi2C3-based FETs satisfy critical requirements for advanced semiconductor applications.
  • This study provides the first systematic evaluation of Bi2C3's potential in MOSFETs using DFT-NEGF simulations.