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MOSFET: Enhancement Mode01:22

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Patterning via Optical Saturable Transitions - Fabrication and Characterization
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Nonvolatile switchable electromagnetically induced transparency in terahertz range.

Alexander I Solomonov1,2, Wenpeng Guo1, Yu Wang1

  • 1School of Physics, Harbin Institute of Technology, Harbin 150001, China.

The Journal of Chemical Physics
|December 9, 2025
PubMed
Summary
This summary is machine-generated.

This study introduces a switchable metasurface using Ge-Sb-Te material for dynamic terahertz wave control. It enables robust switching between transparent and opaque states, advancing terahertz photonic applications.

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Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
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Area of Science:

  • Metamaterials and Nanophotonics
  • Terahertz (THz) Technology
  • Phase-Change Materials

Background:

  • Terahertz (THz) frequency range offers potential for high-speed communication, sensing, and imaging.
  • Dynamic control of THz waves is a significant challenge hindering practical applications.
  • Metasurfaces offer a promising platform for manipulating electromagnetic waves.

Purpose of the Study:

  • To design and demonstrate a switchable metasurface for dynamic terahertz wave modulation.
  • To achieve switchable electromagnetically induced transparency (EIT) in the THz range using a phase-change material.
  • To explore the potential of Ge-Sb-Te (GST) material for nonvolatile THz switching.

Main Methods:

  • Fabrication of a metasurface with gold stripes on a Ge-Sb-Te (GST) sublayer.
  • Theoretical analysis of quasi-bound-in-continuum (quasi-BIC) related EIT modes.
  • Experimental validation of the metasurface's switching behavior and tunable EIT bandwidth.
  • Utilizing the phase transition of GST to alter metasurface electrical properties.

Main Results:

  • Demonstrated switchable electromagnetically induced transparency (EIT) in the terahertz frequency range.
  • Achieved precise tuning of EIT bandwidth through geometric parameter adjustments and controlled asymmetry.
  • Showcased robust, nonvolatile switching between transparent and opaque states via GST phase transition.
  • Validated the design through theoretical analysis and experimental measurements.

Conclusions:

  • The developed GST-based metasurface enables effective dynamic modulation of terahertz waves.
  • This technology holds significant potential for advanced terahertz photonic devices and applications.
  • The switchable EIT provides a novel mechanism for controlling THz wave propagation.