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Related Experiment Video

Updated: Jan 9, 2026

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Gate-Controlled Terahertz Modulation in Graphene-Integrated Bi2Se3 Microstructure.

Chihun In1,2, Sumin Lee3,4, Deepti Jain5

  • 1Department of Physics, Freie Universität Berlin, 14195 Berlin, Germany.

Nano Letters
|December 9, 2025
PubMed
Summary
This summary is machine-generated.

Terahertz spectroscopy reveals how graphene influences Bi2Se3 Dirac plasmon polaritons. Large graphene polarizability allows significant control over this coupled mode using moderate gate voltages.

Keywords:
grapheneplasmonspectroscopyterahertztopological insulator

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spectroscopy

Background:

  • Terahertz (THz) spectroscopy probes collective oscillations of free charge carriers in 2D materials.
  • The resonant response in THz spectra is linked to 2D plasmon modes.

Purpose of the Study:

  • Investigate the spectral extinction of THz waves transmitted through graphene-integrated Bi2Se3 microstructures.
  • Characterize the control of Bi2Se3 Dirac plasmon polaritons (DPPs) by graphene via gate voltage.

Main Methods:

  • Utilized THz spectroscopy to measure spectral extinction.
  • Employed electromagnetic wave simulations to analyze the coupled plasmon modes.
  • Varied bias voltage to control sheet conductance and particle density.

Main Results:

  • Observed consistent spectral modulation with varying particle density, matching simulation results.
  • Characterized the coupling between Bi2Se3 DPPs and graphene.
  • Demonstrated up to 70% control of the Bi2Se3 DPP mode using a -1 to 1 V gate voltage range due to large graphene polarizability.

Conclusions:

  • Graphene's polarizability significantly influences Bi2Se3 DPPs.
  • Provides insights into interlayer long-range Coulomb interactions in Dirac materials.
  • Highlights potential for gate-tunable THz devices based on coupled Dirac materials.