Interface-Induced Synaptic Performance in CeO₂/La_0.8Ba_0.2MnO₃ Oxygen Reservoir Junction

Area of Science:

• Materials Science
• Nanotechnology
• Solid State Physics

Background:

• Next-generation intelligent applications demand resistive switching devices with low power consumption, high stability, and neuromorphic capabilities.
• La0.8Ba0.2MnO3 (LBMO) is a complex oxide with a room-temperature metal-insulator transition, making it a potential candidate for such devices.

Purpose of the Study:

• To demonstrate interface-engineered resistive switching in LBMO thin films by incorporating an ultrathin CeO2 insertion layer.
• To evaluate the performance and neuromorphic characteristics of the engineered CeO2/LBMO (LBC) device.

Main Methods:

• Fabrication of LBMO thin films and CeO2/LBMO (LBC) heterostructures.
• Characterization of resistive switching properties, including forming voltage, ON/OFF ratio, endurance, and data retention.
• Investigation of synaptic behaviors under pulsed stimuli.

Main Results:

• The LBC device exhibits stable, low-power bipolar resistive switching with a low forming voltage (2.2 V), ON/OFF ratio (~10^2), endurance (600 cycles), and retention (10^3 s).
• Improved performance is attributed to controlled oxygen vacancy migration facilitated by the CeO2 interlayer.
• The LBC device demonstrates bioinspired synaptic behaviors like gradual potentiation/depression and linear plasticity, emulating synaptic weight modulation.

Conclusions:

• Interface engineering with a CeO2 interlayer significantly enhances the performance of LBMO-based resistive switching devices.
• The LBC device shows compelling potential for next-generation neuromorphic computing components due to its stable operation and synaptic functionalities.