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Single-Crystalline Antimony Sulfoselenide Microrods with Selenium Gradient Incorporation for High-Responsivity

Ao Zeng1, Haoyun Dou1, Yongchang Li1

  • 1Yunnan Key Laboratory of Optoelectronic Information Technology, College of Physics and Electronic Information, Yunnan Normal University, 768 JuXian Street, Kunming 650500, China.

Inorganic Chemistry
|December 10, 2025
PubMed
Summary

Defect engineering in antimony sulfide (Sb2S3) using a two-step process created antimony sulfoselenide (Sb2(S,Se)3) microrods. This method suppresses defects, enhancing optoelectronic properties for advanced devices.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Optoelectronics

Background:

  • Antimony sulfide (Sb2S3) suffers from sulfur vacancies, hindering optoelectronic applications.
  • Crystallization heterogeneity further complicates Sb2S3 performance.

Purpose of the Study:

  • To develop a defect engineering strategy for antimony chalcogenides.
  • To fabricate single-crystalline antimony sulfoselenide (Sb2(S,Se)3) microrods with improved optoelectronic properties.

Main Methods:

  • A two-step approach combining hydrothermal growth and post-selenization treatment.
  • Theoretical calculations and ab initio molecular dynamics simulations to understand defect passivation.
  • Controlled selenization temperature (300-400 °C) for tunable Se incorporation.

Main Results:

  • Fabrication of single-crystalline Sb2(S,Se)3 microrods with suppressed defects.
  • Selenium passivation of sulfur vacancies confirmed energetically favorable.
  • Optimized photodetector achieved high responsivity (9.68 A/W), EQE (2185%), fast response, and high detectivity (7.2 × 10^10 Jones).

Conclusions:

  • The strategy enables defect control and property enhancement in low-dimensional metal chalcogenides.
  • Spatially controlled heteroatom doping is a viable approach for high-performance optoelectronics.
  • Insights provided for designing next-generation optoelectronic devices.