Thermal Stability of Thin Metal Films on GaN Surfaces: Morphology and Nanostructuring

The development of metal nanostructures on large-area Gallium Nitride (GaN) surfaces has the potential to enable new, low-cost technologies for III-N semiconductor layer nanostructuring. Self-assembled nanostructures are typically formed through the thermal activation of solid-state dewetting (SSD) in thin metal layers. However, such thermal processing can induce degradation of the metal-GaN material system. This comprehensive study investigated the thermal stability of thin metal films on GaN surfaces, focusing on their morphology and nanostructuring for high-temperature processing. The research expands and systematizes the understanding of the thin metal layers on GaN surface interactions at high temperatures by categorizing metals based on their behaviour: those that exhibit self-assembly, those that catalyze GaN decomposition, and those that remain thermally stable. Depending on the annealing temperature and metal type, varying degrees of GaN layer decomposition were observed, ranging from partial surface modification to significant volumetric degradation of the material. A wide range of metals was investigated: Au, Ag, Pt, Ni, Ru, Mo, Ti, Cr, V, Nb. These materials were selected based on criteria such as high work function and chemical resistance. In this studies metal layers with a target thickness of 10 nm deposited by vacuum evaporation on 2.2 μm thick GaN layers grown by metal organic vapor phase epitaxy were applied. The surface morphology and composition were analyzed using AFM, SEM, EDS, and Raman spectroscopy measurement techniques.