Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Characteristics of MOSFET01:17

Characteristics of MOSFET

881
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
881
Biasing of FET01:22

Biasing of FET

653
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
653
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

746
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
746
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

1.1K
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
1.1K
MOSFET01:16

MOSFET

1.1K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.1K
Field Effect Transistor01:29

Field Effect Transistor

1.1K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Disclosure of AI Use in Radiology: Patient Perspectives and Preferences.

Radiology·2026
Same author

Modeling developmental spiking behavior driven by ionic current dynamics of mouse and human inner hair cells using a calcium-enhanced Izhikevich framework.

Journal of computational neuroscience·2026
Same author

Structural analysis of <i>de novo</i> designed binders targeting the closed state of HSP90.

bioRxiv : the preprint server for biology·2026
Same author

Deciphering glyoxalase gene families and their coordinated regulation with the ascorbate-glutathione cycle during salinity stress in <i>Artemisia annua</i>.

Physiology and molecular biology of plants : an international journal of functional plant biology·2026
Same author

Reply to the Letter to the Editor: Methodological considerations in assessing patient perspectives on artificial intelligence in symptomatic breast imaging.

European radiology·2026
Same author

Structural basis of phosphodiesterase-5 conformational organization revealed by a PDE6/PDE5 chimera.

The Journal of biological chemistry·2026

Related Experiment Video

Updated: Jan 9, 2026

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
07:50

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

11.6K

Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for

Potaraju Yugender1,2, Sneha Singh1, Kuleen Kumar3

  • 1Department of Electronics and Communication Engineering, National Institute of Technology Mizoram, Chaltlang, Aizawl 796012, Mizoram, India.

Nanomaterials (Basel, Switzerland)
|December 10, 2025
PubMed
Summary
This summary is machine-generated.

Researchers developed a novel Gate All Around Field-Effect Transistor (GAA FET) using Silicon-Germanium (SiGe) with a 2 nm gate underlap. This innovation significantly enhances radio frequency performance and reduces power consumption for advanced electronics.

Keywords:
GAA FETSi/SiGe channelgate stacklinearity and harmonics analysis

More Related Videos

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.6K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

8.1K

Related Experiment Videos

Last Updated: Jan 9, 2026

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
07:50

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

11.6K
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.6K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

8.1K

Area of Science:

  • Semiconductor device physics
  • Materials science for electronics

Background:

  • Radio frequency (RF) applications demand high-performance transistors.
  • Existing Field-Effect Transistors (FETs) face limitations in speed, power efficiency, and parasitic effects.

Purpose of the Study:

  • To investigate the performance enhancements of a Gate Stack Gate-All-Around (GAA) FET incorporating Silicon-Germanium (SiGe) and a specific gate underlap.
  • To evaluate the impact of a 2 nm gate underlap and high-k spacer on electrical and RF analog characteristics.

Main Methods:

  • Fabrication of a Gate Stack GAA FET with SiGe and a 2 nm gate underlap.
  • Encapsulation of a high-k spacer within the gate stack structure.
  • Electrical and radio frequency performance characterization of the fabricated device.

Main Results:

  • Achieved a 192.52% increase in drain current and a 98% reduction in off-state current (IOFF).
  • Demonstrated an 11.24% reduction in subthreshold swing, improving the Ion/Ioff ratio and controlling short-channel effects (SCEs).
  • Showcased improved linearity parameters (VIP2, VIP3, IIP3) and reduced harmonic distortions (IMD3, THD).

Conclusions:

  • The SiGe-based Gate Stack GAA FET with a 2 nm gate underlap and high-k spacer offers superior electrical and RF performance.
  • This device is well-suited for high-performance, low-power CMOS circuits, IoT, and 5G/6G applications.
  • The design contributes to sustainable electronic solutions through improved efficiency.