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Unveiling Boundary-Localized Interfacial Interactions in Temperature-Controlled Au-Assisted Exfoliation of MoS2
Chaoqi Dai1, Sikai Chen1, Boyuan Wen1
1State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
Abstract:
Gold-assisted exfoliation is an effective approach to obtain clean and large-area monolayers of transition metal dichalcogenides, yet the microscopic evolution of interfacial adhesion remains poorly understood. Here, we investigate temperature-controlled exfoliation of MoS2 between 30 and 170 °C. Based on optical microscopy image analysis, mild heating slightly improves the exfoliation yield, which is associated with the release of interfacial contaminants and trapped gases-these substances enhance the adhesion between gold and molybdenum disulfide (Au-MoS2). Unexpectedly, as revealed by AFM, SEM-EDS, and Raman analyses, parts of the Au film start to peel off from the underlying Ti adhesion layer at approximately 100 °C. This Au film detachment, resulting from the surprisingly weak Au-Ti adhesion, serves as a unique probe for interfacial strength: it preferentially occurs at the boundaries of MoS2 flakes, indicating that the reinforcement of the Au-MoS2 interaction originates at the edges rather than being uniformly distributed. At higher temperatures (>130 °C), Au detachment expands to larger areas, indicating that boundary-localized adhesion progressively extends across the entire interface. Additional STM/STS measurements further confirm that thermal annealing improves local Au-MoS2 contact by removing interfacial species and enabling surface reconstruction. These findings establish a microscopic picture of temperature-assisted exfoliation, highlighting the dual roles of interfacial contaminant release and boundary effects, and offering guidance for more reproducible fabrication of high-quality 2D monolayers.
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