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Robust Self-Trapped Exciton Emission in Sb3+-Engineered Lead-Free Cs4SnBr6 Zero-Dimensional Perovskites
Haixia Wu1, Wendi Zhou1, Rui Huang1
1School of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou 521041, China.
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Zero-dimensional (0D) tin halide perovskites have emerged as promising luminescent materials owing to their broadband emission, high quantum yield, and negligible self-absorption. Yet, their luminescence efficiency and stability remain insufficient for practical optoelectronic applications. Here, Sb3+ dopants are introduced into Cs4SnBr6 through a water-assisted wet ball milling strategy, resulting in bright and thermally robust emission. The doped materials exhibit pronounced self-trapped exciton (STE) luminescence centered at 525 nm with a broad full width at half maximum of 110 nm, a large Stokes shift of approximately ~1.3 eV, and a photoluminescence lifetime of ~0.8 µs. Remarkably, Sb3+ incorporation boosts the photoluminescence quantum yield (PLQY) up to 64% at room temperature while simultaneously improving thermal stability. Correlated spectroscopic analyses reveal that the Sb3+-induced lattice distortion of the [SnBr6]4- octahedra strengthens electron-phonon interactions and elevates the STE binding energy, thereby stabilizing the excited states and suppressing nonradiative losses.
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