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Analysis of Superjunction MOSFET (CoolMOSTM) Concept Limitations-Part II: Simulations
Zbigniew Lisik1, Jacek Podgórski1
1Department of Semiconductor and Optoelectronic Devices, Lodz University of Technology, Aleje Politechniki 8, 93-590 Lodz, Poland.
Materials (Basel, Switzerland)
|December 11, 2025
Summary
CoolMOS rade', a high-voltage power device, faces limitations despite theoretical promise. This study identifies physical and technological constraints hindering its performance in superjunction transistors.
Area of Science:
- Semiconductor device physics
- Power electronics
Background:
- CoolMOS rade echnology was developed to overcome high-voltage limitations in unipolar power devices.
- Theoretical models suggested significant improvements, but practical performance has not met expectations.
Purpose of the Study:
- To identify the physical and technological limitations of the CoolMOS rade echnology.
- To analyze the factors preventing CoolMOS rade rom fulfilling its theoretical high-voltage capabilities.
Main Methods:
- Numerical investigations of CoolMOS rade ransistor structures.
- Analysis based on a typical VDMOS (Vertical Double-diffused Metal-Oxide-Semiconductor) structure.
Main Results:
- The study identifies specific physical and technological constraints inherent in the CoolMOS rade\\'s superjunction design.
- These limitations were revealed through detailed numerical simulations of the device structure.
Conclusions:
- The theoretical potential of CoolMOS rade or high-voltage applications is currently limited by practical physical and manufacturing constraints.
- Further research and development are needed to address these identified limitations for improved device performance.
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