A Photovoltaic-Integrated Broadband Photodetector Based on Vertically-Stacked Lateral-Aligned Nanowire Arrays

A photovoltaic-integrated broadband photodetector based on vertically-stacked lateral-aligned III-V nanowire arrays is proposed and investigated. The staggered arrangement configuration drastically reduces the competition between solar cell and photodetector that is difficult to avoid in vertically-stacked planar structures, which enables broadband strong absorption. The lower GaAs nanowires (NWs) act as Mie scattering centers, which scatter the incident light passing through the gaps back to the upper layer, enhancing the absorption of InAs NWs over a wide wavelength range from the ultraviolet to the infrared. Meanwhile, the light trapping effect of the upper InAs nanowires improves the absorption of lower GaAs NWs. At a near-infrared wavelength of 1400 nm, the photovoltaic-integrated InAs nanowire photodetector exhibits a photocurrent density of 168.83 mA/cm² and responsivity of 0.168 A/W, 90% and 93% higher than the single layer InAs nanowires. The conversion efficiency of the GaAs nanowire solar cell is also improved after integration. This work may pave the way for the development of self-powered miniaturized broadband photodetectors.