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Inductively coupled plasma (ICP) is the common plasma source used in atomic emission spectroscopy (AES), a technique that detects and analyzes various elements in a sample. This method is often called inductively coupled plasma atomic emission spectroscopy (ICP-AES).
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Ultrafast avalanche photodiode exceeding 100 GHz bandwidth.

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Researchers developed a new avalanche photodiode (APD) using a uni-multiplication-carrier concept. This breakthrough achieves record 105 GHz bandwidth and improved sensitivity for high-speed optical communications and sensing.

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Area of Science:

  • Optoelectronics
  • Materials Science
  • Semiconductor Physics

Background:

  • Avalanche photodiodes (APDs) require materials with a low ionization coefficient ratio (k) for high-speed and sensitive photodetection.
  • Germanium/Silicon (Ge/Si) APDs offer CMOS compatibility but are limited to tens of gigahertz bandwidth due to dual-carrier multiplication in Germanium (Ge).

Purpose of the Study:

  • To overcome the bandwidth limitations of Ge/Si APDs by introducing a novel uni-multiplication-carrier concept.
  • To achieve high-speed and high-sensitivity photodetection beyond current technological barriers.

Main Methods:

  • Designed a separated absorption-charge-cliff-multiplication structure.
  • Engineered a gradient electric field distribution within a thin Ge region.
  • Achieved electron-dominated carrier multiplication with a reduced k.

Main Results:

  • Demonstrated a record-high bandwidth of 105 GHz at a gain of 7.
  • Enabled 8×260 Gb/s signal reception, a feat previously requiring gainless detectors.
  • Achieved a 9 dB improvement in sensitivity.

Conclusions:

  • The uni-multiplication-carrier concept in Ge/Si APDs transcends previous material limitations.
  • This advancement enables amplifier-free optical communications, ultra-precise optical sensing, and large-scale optical computing.
  • The developed APD technology offers significant improvements in speed and sensitivity for optoelectronic applications.