Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

Non-ohmic Devices

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Blurring the Lines: NPM1 Mutation in Blast Phase CML Challenges Traditional Paradigms.

Indian journal of hematology & blood transfusion : an official journal of Indian Society of Hematology and Blood Transfusion·2026

Same author

Therapy-related B-cell acute lymphoblastic leukemia after treatment for multiple myeloma.

American journal of blood research·2026

Same author

A Randomized Controlled Study Comparing Patient Satisfaction and Clinical Outcomes of Different Nasal Packs in Nasal Surgery.

Cureus·2026

Same author

Literature review on forensic implications of illicit drug metabolism: A medicinal chemistry perspective.

Journal of forensic and legal medicine·2026

Same author

Hypoxia-induced metabolic and apoptotic reprogramming enhances immunomodulation in Wharton's jelly mesenchymal stem cells.

iScience·2026

Same author

Spray-Coated Indium Tin Hydroxide-WO<sub>3</sub> Nanocomposites for Dual-Band Electrochromic Smart Windows.

ACS applied materials & interfaces·2026

Same journal

Stabilizing Pd Catalysts on Pentacoordinated Al<sup>3+</sup> Sites of Alumina for Efficient Hydrogenation of Hexafluoropropylene.

ChemPlusChem·2026

Same journal

Design, Synthesis, and Performance Characterization of BODIPY-Based NIR Probes for Aβ<sub>42</sub> Aggregate Detection.

ChemPlusChem·2026

Same journal

Eliminate the Metal Ion in the Edible Oil Based on High Extraction pH-Switchable Deep Eutectic Solvents.

ChemPlusChem·2026

Same journal

Cinoplatin: An Efficient Platinum(IV) Prodrug Effective in Inhibiting the Growth of Cervical Cancer.

ChemPlusChem·2026

Same journal

A Mitochondria-Targeted Flavokawain A Derivative Suppresses Lymphoma by Disrupting Oxidative Phosphorylation.

ChemPlusChem·2026

Same journal

CALPUCK: An Open Python Tool for Cremer-Pople Ring Puckering Analysis Including a New 2D Mapping of Seven-Membered Rings.

ChemPlusChem·2026

See all related articles

Search research articles

Related Experiment Video

Updated: Jan 8, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Recent Advances in Inorganic Oxide-Based Resistive Random Access Memory: Challenges and Strategies for Practical

Anurag Pritam^1,2, Anwesha Mahapatra¹, Ritu Gupta¹

¹Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur, India.

|December 13, 2025

Summary

This summary is machine-generated.

Resistive random-access memory (RRAM) offers fast, scalable, low-power nonvolatile memory solutions. This review highlights advances in oxide-based RRAM, crucial for next-generation neuromorphic computing and brain-inspired hardware.

Keywords:

RRAM array level integration memristors neuromorphic computing oxide material two‐terminal devices

More Related Videos

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

Writing and Low-Temperature Characterization of Oxide Nanostructures

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

Related Experiment Videos

Last Updated: Jan 8, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

Writing and Low-Temperature Characterization of Oxide Nanostructures

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

Area of Science:

Materials Science
Electrical Engineering
Computer Science

Background:

Resistive random-access memory (RRAM) is a key emerging nonvolatile memory technology.
RRAM offers advantages like high speed, scalability, low power, and CMOS compatibility.
Its operation involves resistance modulation in dielectric materials, suitable for neuromorphic applications.

Purpose of the Study:

To review recent advancements in oxide-based RRAM devices.
To compare RRAM developments with conventional memory technologies.
To discuss the role of RRAM in neuromorphic computing.

Main Methods:

Literature review of oxide-based RRAM.
Analysis of switching mechanisms (e.g., filamentary).
Comparison with existing memory technologies.

Main Results:

Oxide-based RRAM has evolved significantly from early memristor concepts.
Various inorganic and organic materials enable tunable switching and multilevel storage.
RRAM shows promise for low-power, high-density, and brain-inspired computing.

Conclusions:

Oxide-based RRAM represents a foundational platform for advanced memory solutions.
RRAM technology is critical for the future of neuromorphic computing.
Further research is needed to address current challenges and unlock full potential.