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Updated: Jan 8, 2026

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
Topotactic Phase Transformation in Vanadium Dioxide through Oxygen Vacancy Ordering with Synergistic Electron Doping
Xuanchi Zhou1,2, Xiaohui Yao1, Xiaomei Qiao1
1Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & School of Materials Science and Engineering, Shanxi Normal University, Taiyuan, 030031, China.
Abstract:
Controlling the insulator-metal transition (IMT) in correlated oxide system through oxygen vacancy ordering opens up a new paradigm for unlocking exotic structural transformation and physical functionality. Oxygen vacancies serve as a powerful tuning knob for adjusting the IMT property of VO2, though driving topochemical reduction to V2O3 remains rather challenging due to structural incompatibility and competing phase instability. Here, a consecutive oxygen-vacancy-driven VO2-VO2-x-V2O3 topotactic phase transformation route is demonstrated with pronounced facet-dependent anisotropy, engendering widely tunable IMT properties across an extended temperature range over 200 K. Remarkably, topochemically reduced V2O3 inherits the crystallographic characteristics from parent VO2, enabling the possibility of accessing exotic lattice framework with tunable IMT behaviors. Analogous electron doping arising from hydrogenation and oxygen vacancies contributes cooperatively to drive Mott phase transition in VO2 through band-filling control, while ionic interactions between protons and oxygen vacancies markedly accelerate the oxygen ionic mobility. The work not only establishes a framework for engineering physical functionality through defect-mediated topotactic transition and band filling but also provides fundamentally new insights for filling-controlled Mott physics.
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