Related Experiment Video
Updated: Jan 8, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Charge Dynamics as Probed by Small Signal-Modulated Photocurrent and Impedance Spectroscopy of Metal Vanadate
Juan Carlos Expósito-Gálvez1, Abhishek Rawat2, Krishnan Rajeshwar2
1Center for Nanoscience and Sustainable Technologies (CNATS). Department of Physical, Chemical and Natural Systems, Universidad Pablo de Olavide, Sevilla 41013, Spain.
Abstract:
This study presents the combined and complementary use of two techniques, namely, intensity modulated photocurrent spectroscopy (IMPS) and photoelectrochemical impedance spectroscopy (PEIS) for the study of partially or wholly replacing copper with an alkaline earth metal (Mg, Ca) in a metavanadate compound matrix (MV2O6). To this end, the three reference compounds (CuV2O6, CaV2O6, MgV2O) and two alloy compositions (Mg0.1Cu0.9V2O6 and Ca0.1Cu0.9V2O6), obtained from a solution combustion technique, were screen-printed on fluorine-doped tin oxide glass (FTO) substrates. Wavelength discrimination for optical excitation of these semiconductor samples was provided by using high-power LED (front-side) illumination with different wavelengths, UV (λ = 370 nm), blue (λ = 455 nm), green (λ = 535 nm), and red (λ = 670 nm). A nonunity photogeneration yield of mobile charge carriers was seen in a trend reminiscent of previous data on binary oxides or even for other types of ternary copper oxides from other laboratories. The dynamic aspects of charge transfer and carrier recombination are discussed using the combined IMPS-PEIS data along with other optical (e.g., diffuse reflectance spectroscopy) and photoelectrochemical data.
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Voltammetry: Factors Affecting Measurements
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Voltammetric Techniques: Pulse Voltammetry

