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Enhanced 2D MoTe2 Analogue Switching through Laser Processing and ALD-Passivation for Dual-Function Neuromorphic

Mohamed Radwan1, Seyed Hossein Hosseini-Shokouh1, Abde Mayeen Shafi1

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|December 15, 2025
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Summary

Researchers enhanced two-dimensional molybdenum ditelluride (MoTe2) devices for neuro-based computing. Laser treatment and Al2O3 deposition significantly improved memristor and memtransistor performance, boosting pattern recognition accuracy.

Keywords:
2D MaterialsAnalogue SwitchingAtomic Layer DepositionLaser PatterningMemristorMemtransistorNeuromorphic

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Neuro-engineering

Background:

  • Memristors and memtransistors are key for neuro-based computing.
  • Two-dimensional molybdenum ditelluride (MoTe2) shows promise due to its low phase-change energy and tunable electrical properties.
  • Pristine MoTe2 devices have limited memory windows, hindering neuromorphic applications.

Purpose of the Study:

  • To enhance the analog switching characteristics of lateral MoTe2 devices.
  • To improve the performance of MoTe2-based memristors and memtransistors for neuromorphic computing.
  • To investigate the synergistic effects of sequential laser treatment and Al2O3 atomic layer deposition.

Main Methods:

  • Sequential application of laser treatment and atomic layer deposition (ALD) of Al2O3 on lateral MoTe2 devices.
  • Characterization of device performance as both memristors and memtransistors.
  • Simulation of artificial neural networks to evaluate pattern recognition accuracy.

Main Results:

  • A 70-fold improvement in dynamic range for memristor operation.
  • A 20-fold enhancement in dynamic range for memtransistor operation.
  • A 10-fold increase in pattern recognition accuracy in artificial neural network simulations.

Conclusions:

  • The combined laser treatment and Al2O3 ALD effectively enhances MoTe2 device performance for neuromorphic applications.
  • The dual memristor/memtransistor functionality enables emulation of synaptic plasticity (homosynaptic and heterosynaptic).
  • This approach significantly advances the potential of 2D materials in next-generation computing architectures.