Conductivity-enhanced thick hole-transporting layers via doping-crosslink synergy for efficient and stable NIR QLEDs
Wei-Zhi Liu1, Ye Wang1, Shuai-Hao Xu1
1Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China. dyzhou@suda.edu.cn.
Nanoscale
|December 16, 2025
Summary
Researchers developed a doped thick hole-transporting layer (HTL) using CBP-V and TAPC for scalable quantum-dot light-emitting diodes (QLEDs). This improves surface coverage and charge transport, boosting QLED performance and lifetime.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Scalable manufacturing of quantum-dot light-emitting diodes (QLEDs) faces challenges due to non-uniform charge-transporting layers on rough indium tin oxide substrates, causing leakage currents and low yields.
- Existing methods struggle to create thick, uniform hole-transporting layers (HTLs) that effectively suppress shunting paths without compromising device performance.
Purpose of the Study:
- To develop a scalable method for fabricating uniform and thick HTLs for high-performance near-infrared (NIR) QLEDs.
- To enhance charge transport in thick HTLs by introducing a doped polymer matrix.
- To improve surface coverage and suppress leakage currents in QLEDs manufactured on uneven substrates.
Main Methods:
- Employed a UV/thermally crosslinkable material, 4,4'-bis(3-vinyl-9H-carbazol-9-yl)1,1'-biphenyl (CBP-V), to create thick HTLs (∼100 nm).
- Introduced a doped HTL design by embedding a high-mobility small molecule, 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC), into the crosslinked CBP-V matrix.
- Fabricated FAPbI3-based NIR QLEDs using the TAPC-doped CBP-V HTLs and evaluated their performance and stability.
Main Results:
- The TAPC-doped CBP-V HTLs provided smooth morphology, excellent solvent resistance, and improved surface coverage, effectively suppressing shunting paths.
- The doped HTLs facilitated hole transport through the thick polymer layer via auxiliary hopping pathways created by dispersed TAPC molecules.
- Achieved a peak external quantum efficiency of 17.3% and a T50 lifetime of 262 min for NIR QLEDs, significantly outperforming devices with thin or undoped HTLs.
- Demonstrated uniform emission in large-area blade-coated devices, compensating for substrate roughness.
Conclusions:
- The TAPC-doped thick HTL approach offers a scalable and reliable route toward high-performance NIR QLEDs.
- This strategy effectively addresses substrate roughness and enables uniform device fabrication.
- The combination of a crosslinked polymer matrix and embedded small molecules provides a viable solution for overcoming limitations in QLED manufacturing.
Related Concept Videos
P-N junction
1.1K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.1K
Biasing of P-N Junction
1.7K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.7K
Metal-Semiconductor Junctions
866
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
866
Types of Semiconductors
1.3K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.3K


