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Updated: Jan 8, 2026

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
Published on: September 8, 2017
Ionotronics-Enabled Emerging Halide Perovskite Optoelectronic Devices
Runsheng Gao1,2, Xiaojian Zhu1,2, Xiaohan Meng1,3
1Zhejiang Key Laboratory of Magnetic Materials and Applications, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.
Abstract:
With the rise of technologies such as artificial vision, smart wearables, and interactive displays, the demand for high-performance, intelligent, and portable optoelectronic devices has increased significantly. However, conventional silicon-based optoelectronic devices face limitations in perceiving, processing, and feeding back optoelectrical information, making them unable to meet increasing demanding performance requirements. Conversely, halide perovskites, characterized by excellent optoelectronic properties and high structural tunability, show great potential for advanced next-generation optoelectronic applications. Recent studies have revealed diverse ionic and electronic behaviors that are crucial for achieving essential physical properties in the design of emerging optoelectronic devices. This review discusses the ionotronic mechanisms of halide perovskites and elucidates how these mechanisms enable high photosensitivity, tunable conductivity, and efficient luminescence. Recent developments in emerging photodetectors, neuromorphic processors, and full-color displays are discussed for intelligent applications. Additionally, the prospects and challenges of ionotronics-driven halide perovskite-based optoelectronic devices are evaluated.

