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High-Performance Ta2NiSe5-Based Broadband Photodetectors toward Self-Powered and Polarization-Sensitive Detection
Jingying Wang1,2, Weijing Liu1,2, Weike Wang3
1School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 212013, Jiangsu China.
ACS Applied Materials & Interfaces
|December 16, 2025
Summary
This study explores self-powered photodetectors using two-dimensional (2D) tantalum-based heterostructures. The Ta2NiSe5/MoSSe device demonstrates excellent broadband polarization-sensitive detection in the ultraviolet to near-infrared range.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Optoelectronics
Background:
- Two-dimensional (2D) tantalum selenide (Ta2NiSe5) is a promising broadband optoelectronic material due to its narrow bandgap, high carrier mobility, and stability.
- Existing Ta2NiSe5 heterostructures show high-performance detection under bias, but self-powered polarization-sensitive detection, especially under near-infrared (NIR) illumination, remains underexplored.
Purpose of the Study:
- Investigate the self-powered photoresponse and polarization-sensitive capabilities of novel 2D Ta2NiSe5-based heterojunctions.
- Evaluate Ta2NiSe5/MoS2, Ta2NiSe5/MoSe2, and Ta2NiSe5/MoSSe heterostructures for self-powered broadband detection.
- Demonstrate the potential for high-performance, self-powered, polarization-sensitive photodetectors.
Main Methods:
- Fabrication and characterization of Ta2NiSe5/MoS2, Ta2NiSe5/MoSe2, and Ta2NiSe5/MoSSe heterostructures.
- Measurement of photoresponse across ultraviolet to near-infrared spectrum under self-powered conditions.
- Assessment of polarization sensitivity, responsivity, specific detectivity, rectification ratio, on/off ratio, and dark current.
Main Results:
- The Ta2NiSe5/MoSSe heterostructure exhibits superior self-powered broadband polarization-sensitive detection from UV to NIR.
- Achieved high performance metrics: responsivity of 238 mA/W, specific detectivity of 2.73 × 1012 Jones, rectification and on/off ratios of ~105, and ultra-low dark current of 10-14 A.
- Demonstrated significant polarization sensitivity (2.3 at 750 nm) attributed to the in-plane anisotropy of Ta2NiSe5.
Conclusions:
- Ta2NiSe5/MoSSe heterostructures are highly effective for self-powered broadband polarization-sensitive photodetection.
- The observed performance is linked to a strong built-in electric field and reduced contact resistance.
- This research provides a pathway for developing advanced self-powered and polarization-sensitive photodetectors.

