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Related Concept Videos

Valence Bond Theory02:42

Valence Bond Theory

11.1K
Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
11.1K
MOS Capacitor01:25

MOS Capacitor

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

859
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
859
Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)01:20

Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)

1.5K
Two NMR-active nuclei bonded to a central atom can be involved in geminal or two-bond coupling. Geminal coupling is commonly seen between diastereotopic protons in chiral molecules and unsymmetrical alkenes, among others.
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
1.5K
Spin–Spin Coupling: One-Bond Coupling01:17

Spin–Spin Coupling: One-Bond Coupling

1.4K
Coupling interactions are strongest between NMR-active nuclei bonded to each other, where spin information can be transmitted directly through the pair of bonding electrons. While nuclei polarize their electrons to the opposite spins, the bonding electron pair has opposite spins. Configurations with antiparallel nuclear spins are expected to be lower in energy. When coupling makes antiparallel states more favorable, J is considered to have a positive value. The one-bond coupling constant, 1J,...
1.4K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

511
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
511

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Updated: Jan 7, 2026

Fabrication of Spatially Confined Complex Oxides
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Fabrication of Spatially Confined Complex Oxides

Published on: July 1, 2013

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MgO Tunneling Spintronics across Capacitively Coupled Atomic Clusters.

Mathieu Lamblin1, Victor Da Costa1, Loic Joly1

  • 1Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504 CNRS, Université de Strasbourg, 23 Rue du Lœss, BP 43, Strasbourg 67034, France.

Nano Letters
|December 17, 2025
PubMed
Summary
This summary is machine-generated.

Researchers created atom-driven electronics using a commercialized platform. Carbon atoms form nanotransport paths in magnetic tunnel junctions, enabling spin accumulation and quantum signatures for spintronics.

Keywords:
Magnetic tunnel junctionsQuantum transportRandom telegraph noiseResistive switchingResonant tunnelingSpintronics

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Area of Science:

  • Quantum physics
  • Materials science
  • Nanotechnology

Background:

  • Atomic manipulation techniques can create quantum signatures in transport junctions.
  • A viable industrial pathway for atom-driven electronics remains a challenge.

Purpose of the Study:

  • To demonstrate a commercialized device platform for creating atom-driven electronics.
  • To investigate quantum transport phenomena in engineered nanostructures.

Main Methods:

  • Utilizing conducting tip atomic force microscopy to insert carbon atoms into an ultrathin MgO layer.
  • Fabricating and analyzing microscale magnetic tunnel junctions with engineered nanotransport paths.

Main Results:

  • Carbon atoms formed nanotransport paths within the MgO layer.
  • Resonant tunneling in magnetic tunnel junctions led to large magnetoresistance peaks.
  • Observed spin accumulation on a carbon nanodot and dual-dot charging effects.

Conclusions:

  • The commercialized platform facilitates the creation of atom-driven electronics.
  • The findings support a nanoscale dual-dot model for quantum transport in spintronic devices.
  • This research advances spintronics toward a viable quantum technology track.