Related Experiment Video
Updated: Jan 8, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Sorting-Free Carbon Nanotube Synaptic Transistors
Donghee Shin1, Jaegyun Im1, Hoimin Kim2
1School of Chemical Engineering, Pusan National University, Busandaehak-ro 63 beon-gil 2, Geumjeong-gu, Busan, 46241, Republic of Korea.
Abstract:
The development of energy-efficient neuromorphic devices requires synaptic transistors capable of precise conductance modulation and scalable fabrication. Carbon nanotubes (CNTs) are attractive candidates owing to their high carrier mobility, mechanical flexibility, and chemical stability; however, their structural heterogeneity has necessitated costly and time-consuming sorting processes to remove metallic CNTs. Here, unsorted CNT (UCNT)-based synaptic transistors are reported that circumvent the need for sorting by employing an ion gel gate containing a huge amount of mobile ionic charges. The UCNT transistors exhibit an ON/OFF current ratio of ≈25 through reversible anion-driven doping/de-doping and demonstrate essential synaptic functionalities, including short-term plasticity, linear potentiation/depression across 50 states, paired-pulse facilitation with a 149% index, spike-frequency-dependent plasticity, and endurance over 1000 cycles (100 000 pulses in total). Operando Raman measurements confirm that mobile anions are responsible for p-doping and conductance modulation in the UCNT channel. Neuromorphic simulations using measured device parameters achieve an MNIST recognition accuracy of 88.75%, comparable to the ideal case of 92.75%. This study establishes a scalable and cost-effective route for CNT-based synaptic electronics, paving the way toward practical neuromorphic computing applications.
More Related Videos
09:20Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
12:20Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions
Published on: July 22, 2013
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Field Effect Transistor
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Types of Semiconductors
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...