Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

746
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
746
Semiconductors01:22

Semiconductors

1.3K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.3K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

517
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
517
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

866
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
866
MOS Capacitor01:25

MOS Capacitor

1.4K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.4K
MOSFET01:16

MOSFET

1.1K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Prebiotically Plausible Peptides can Self-assemble into β-rich Nanostructures.

bioRxiv : the preprint server for biology·2025
Same author

The dawn of biophysical representations in computational immunology.

QRB discovery·2025
Same author

A novel cereblon variant with both exon 8 and 10 deletions in newly diagnosed and relapsed multiple myeloma.

Blood neoplasia·2025
Same author

Uncertainty-Aware Deep Neural Representations for Visual Analysis of Vector Field Data.

IEEE transactions on visualization and computer graphics·2024
Same author

Visual Analysis of Prediction Uncertainty in Neural Networks for Deep Image Synthesis.

IEEE transactions on visualization and computer graphics·2024
Same author

PDZ Domains from the Junctional Proteins Afadin and ZO-1 Act as Mechanosensors.

bioRxiv : the preprint server for biology·2023

Related Experiment Video

Updated: Jan 8, 2026

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
08:12

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

10.0K

Ion Migration Control in Lead-Free Halide Perovskite Transistors for Logic and Neuromorphic Circuits.

Jean Maria Fernandes1, Soumya Dutta1

  • 1Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai, 600036, India.

Small (Weinheim an Der Bergstrasse, Germany)
|December 17, 2025
PubMed
Summary

Lead-free tin-based perovskite field-effect transistors (PeFETs) offer stable logic and adaptive neuromorphic functions for flexible electronics. Research outlines a roadmap for integrating these sustainable PeFETs into next-generation intelligent devices.

Keywords:
ion migrationlead‐free halide perovskite field‐effect transistorslogic transistor circuitsneuromorphic computingsustainable electronics

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.9K
Spray-Coated Melanin/PEDOT:PSS Films for Sustainable Organic Electrochemical Transistors
08:26

Spray-Coated Melanin/PEDOT:PSS Films for Sustainable Organic Electrochemical Transistors

Published on: October 28, 2025

412

Related Experiment Videos

Last Updated: Jan 8, 2026

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
08:12

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

10.0K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.9K
Spray-Coated Melanin/PEDOT:PSS Films for Sustainable Organic Electrochemical Transistors
08:26

Spray-Coated Melanin/PEDOT:PSS Films for Sustainable Organic Electrochemical Transistors

Published on: October 28, 2025

412

Area of Science:

  • Materials Science
  • Electronics Engineering
  • Sustainable Technology

Background:

  • Lead-free halide perovskite field-effect transistors (PeFETs) are promising for flexible electronics due to excellent charge transport and processing.
  • Tin (Sn)-based perovskites show improved stability over lead-based ones by reducing ion migration, crucial for logic circuits.

Purpose of the Study:

  • To review the potential of lead-free Sn-based PeFETs for both logic and neuromorphic applications.
  • To present a sustainability-driven roadmap for integrating these PeFETs into CMOS-compatible, scalable electronic systems.

Main Methods:

  • Review of recent advances in Sn-based perovskite materials and device architectures.
  • Analysis of ion migration mechanisms and their dual role in logic and neuromorphic behavior.
  • Exploration of external stimuli (electric fields, temperature, light) for device modulation.

Main Results:

  • Sn-based PeFETs demonstrate suppressed ion migration for stable logic, yet retain moderate migration for neuromorphic potential.
  • External stimuli can be used to manage ion migration, enabling multifunctional device operation.
  • Wafer-scale array advancements pave the way for scalable, large-area, and wearable applications.

Conclusions:

  • Lead-free Sn-based PeFETs offer a multifunctional platform for next-generation intelligent electronics.
  • Strategies exist to balance reliable logic performance with adaptive neuromorphic capabilities.
  • These developments support environmentally responsible electronic device innovation.