Related Experiment Video
Updated: Jan 8, 2026

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
Visualizing interaction-driven restructuring of quantum Hall edge states
Jiachen Yu1,2, Haotan Han1,2, Kristina G Wolinski1,2
1Joseph Henry Laboratories, Princeton University, Princeton, NJ, USA.
Abstract:
Many topological phases host gapless boundary modes that can be markedly modified by electronic interactions. Even for the long-studied edge modes of quantum Hall phases1,2, forming at the boundaries of two-dimensional electron systems, the nature of such interaction-induced changes has been elusive. Despite advances made using local probes3-13, key experimental challenges persist: the lack of direct information about the internal structure of edge states on microscopic scales, and complications from edge disorder. Here we use scanning tunnelling microscopy to image pristine electrostatically defined quantum Hall edge states in graphene with high spatial resolution and demonstrate how correlations dictate the structures of edge channels on both magnetic and atomic length scales. For integer quantum Hall states in the zeroth Landau level, we show that interactions renormalize the edge velocity, dictate the spatial profile for co-propagating modes and induce unexpected edge valley polarization, which differs from the bulk. Although some of our findings can be understood by mean-field theory, others show breakdown of this picture, highlighting the roles of edge fluctuations and inter-channel couplings. We also extend our measurements to spatially resolve the edge state of fractional quantum Hall phases and detect spectroscopic signatures of interactions in this chiral Luttinger liquid. Our study establishes scanning tunnelling microscopy as a promising tool for exploring the edge physics of the rapidly expanding group of two-dimensional topological phases, including recently realized fractional Chern insulators.
Related Concept Videos
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
The de Broglie Wavelength
The Quantum-Mechanical Model of an Atom
π Electron Effects on Chemical Shift: Overview
Energy Diagrams, Transition States, and Intermediates
Hybridization of Atomic Orbitals II

