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Updated: Jan 8, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
A configuration interaction approach to solve the Anderson impurity model; applications to elemental Ce
B Herzog1, P Thunström1, O Eriksson1,2
1Department of Physics and Astronomy, Uppsala University, Uppsala, Sweden.
Abstract:
Accurate calculations of strongly correlated materials remain a formidable challenge in condensed matter physics, particularly due to the computational demand of conventional methods. This paper presents an efficient solver for dynamical mean field theory using configuration interaction (CI). The method is shown to have improved efficiency compared to traditional, exact diagonalization approaches. Hence, it provides an accessible, open-source alternative that can be executed on standard laptop computers or on supercomputers. The solver is demonstrated on cerium in the γ, α and ϵ phases. An analysis of how the electronic structure of Ce evolves as function of lattice compression is made. It is argued that the electronic structure evolves from a localized nature of the 4f shell in γ-Ce to an essentially itinerant nature of the 4f shell of ϵ-Ce. The transition between these two phases, as function of compression, can hence be seen as a Mott transition. However, this transition is intercepted by the strongly correlated α-phase of elemental Ce, for which the 4f shell forms a Kondo singlet.
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