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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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A superconductor is a substance that offers zero resistance to the electric current when it drops below a critical temperature. Zero resistance is not the only interesting phenomenon as materials reach their transition temperatures. A second effect is the exclusion of magnetic fields. This is known as the Meissner effect. A light, permanent magnet placed over a superconducting sample will levitate in a stable position above the superconductor. High-speed trains that levitate on strong...
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A substance that reaches superconductivity, a state in which magnetic fields cannot penetrate, and there is no electrical resistance, is referred to as a superconductor. In 1911, Heike Kamerlingh Onnes of Leiden University, a Dutch physicist, observed a relation between the temperature and the resistance of the element mercury. The mercury sample was then cooled in liquid helium to study the linear dependence of resistance on temperature. It was observed that, as the temperature decreased, the...
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The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
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Updated: Jan 8, 2026

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Geometry-controlled engineering of the low-temperature proximity effect in normal metal-superconductor junctions.

Munisa A Tomayeva1,2, Vyacheslav D Neverov2,3, Andrey V Krasavin1,2

  • 1National Research Nuclear University MEPhI, Moscow 115409, Russian Federation.

Beilstein Journal of Nanotechnology
|December 18, 2025
PubMed
Summary

The proximity effect in superconducting devices is influenced by the geometry of normal metal-superconductor (NS) junctions. Interface curvature alters the decay of the superconducting order, impacting device design.

Keywords:
Bogoliubov–de Gennes equationsnormal metal–superconductor junctionorder parameterproximity effectsuperconductivity

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Area of Science:

  • Condensed matter physics
  • Superconductivity
  • Materials science

Background:

  • The proximity effect describes the influence of a superconductor on an adjacent normal metal.
  • At finite temperatures, proximity effect decays exponentially, but at low temperatures, it follows a power law dependent on dimensionality.
  • Understanding factors influencing proximity effect is crucial for superconducting hybrid devices.

Purpose of the Study:

  • To investigate the impact of normal metal-superconductor (NS) junction geometry on the proximity effect.
  • To determine how interface curvature affects the spatial propagation of superconducting order.
  • To explore the relationship between NS interface geometry, junction transparency, and the proximity effect.

Main Methods:

  • Theoretical analysis of the proximity effect in ballistic NS junctions.
  • Investigation of the role of interface curvature (positive and negative) on the Cooper pair wave function decay.
  • Examination of how NS interface geometry influences junction transparency.

Main Results:

  • Geometric factors, particularly interface curvature, significantly alter the decay exponent of the superconducting order.
  • Negative interface curvature increases the proximity range exponent, extending the superconducting influence.
  • Positive interface curvature shortens the proximity range exponent, reducing the superconducting influence.

Conclusions:

  • NS junction geometry is a critical factor in modulating the proximity effect.
  • Interface curvature directly influences the decay rate of superconductivity in adjacent normal metals.
  • These findings are vital for optimizing the design and performance of superconducting hybrid devices.