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Stabilizing the Buried Interface Phase for Perovskite LEDs with a Remarkable T90 Lifetime at 1000 nit
Ximing Wu1, Zhibin Wang1, Song Zheng1
1College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 350117, P. R. China.
Nano Letters
|December 18, 2025
Summary
Improving perovskite light-emitting diodes (PeLEDs) stability is key for commercialization. A new interfacial modifier enhances the buried interface, boosting PeLED performance and operational lifetime.
Area of Science:
- Materials Science
- Optoelectronics
- Solid-State Chemistry
Background:
- Commercialization of perovskite light-emitting diodes (PeLEDs) faces challenges due to insufficient operational stability.
- Compositional heterogeneity at the buried interface is identified as a critical factor limiting device longevity.
Purpose of the Study:
- To enhance the operational stability and performance of perovskite light-emitting diodes (PeLEDs).
- To investigate the role of the buried interface in phase modulation and stability enhancement.
Main Methods:
- Combined morphological and spectroscopic analyses to identify interfacial limitations.
- Introduction of a fluorinated small molecule salt as an interfacial modifier in the hole transport layer.
- Fabrication and characterization of PeLED devices.
Main Results:
- The interfacial modifier promoted perovskite crystallization and mitigated low-n phases, creating a robust buried interface.
- Achieved a high external quantum efficiency of 29.2% and a low driving voltage.
- Demonstrated a T90 operational lifetime of 726 minutes at 1000 cd m⁻².
Conclusions:
- The buried interface plays a critical role in phase modulation and stability enhancement for PeLEDs.
- The developed interfacial strategy offers a viable approach for stable and energy-efficient perovskite optoelectronic devices.
