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Wafer alignment measurement in lithography systems based on vortex beam interference.

Lijun Zhou, Xiangzhao Wang, Zhongliang Li

|December 19, 2025

Summary

This summary is machine-generated.

This study introduces a novel vortex beam interferometry method for high-precision wafer alignment in semiconductor manufacturing. This technique achieves excellent linearity and repeatability, offering a promising alternative for lithography systems.

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Area of Science:

Optics and Photonics
Semiconductor Manufacturing Technology
Metrology

Background:

Overlay accuracy is crucial for integrated circuit manufacturing.
High-performance wafer alignment is essential for achieving overlay accuracy.
Existing phase grating alignment methods meet requirements for advanced lithography but alternatives are sought.

Purpose of the Study:

To propose and validate an alternative optical measurement scheme for high-precision wafer alignment.
To develop a rapid and high-precision wafer alignment technique.
To explore the potential of vortex beam interferometry for lithography applications.

Main Methods:

Utilizing vortex beam interferometry to convert grating diffraction orders into vortex beams.
Employing a displacement-to-angle conversion mechanism based on interference pattern rotation.
Establishing a theoretical model and conducting experimental validation.

Main Results:

Demonstrated a linear relationship between lateral displacement and interference pattern rotation (R² > 0.999 over 1 μm).
Achieved measurement repeatability better than 1.8 nm.
Validated the performance of the vortex beam interferometry scheme under laboratory conditions.

Conclusions:

Vortex beam interferometry offers a precise solution for real-time position sensing in wafer alignment.
The proposed method has significant potential for enhancing overlay accuracy in DUV and EUV lithography.
This technique provides a viable alternative to existing phase grating alignment systems.