Related Experiment Video
Updated: May 16, 2026
09:37
In vivo Optogenetic Stimulation of the Rodent Central Nervous System
Published on: January 15, 2015
60.3K
Green (524 nm) InGaN/GaN laser diodes with nano-porous cladding and deep-ridge waveguiding
Optics Express
|December 19, 2025
Summary
This study demonstrates green-emitting III-Nitride laser diodes using nano-porous GaN cladding. Deeply etched waveguides with sidewall passivation significantly reduced internal loss, enhancing device efficiency.
Area of Science:
- Optoelectronics
- Materials Science
- Semiconductor Devices
Background:
- III-Nitride semiconductors are crucial for optoelectronic devices.
- Achieving efficient green-wavelength emission from III-Nitride laser diodes remains a challenge.
- Nano-porous GaN cladding and advanced waveguide designs offer potential for performance enhancement.
Purpose of the Study:
- To demonstrate III-Nitride edge-emitting laser diodes operating at green wavelengths (524 nm).
- To investigate the impact of deeply etched ridge waveguides and atomic layer deposition (ALD) sidewall passivation on device performance.
- To analyze the reduction in internal loss and its correlation with improved carrier confinement and etch selectivity.
Main Methods:
- Fabrication of III-Nitride edge-emitting laser diodes with nano-porous GaN cladding.
- Implementation of deeply etched ridge waveguides and ALD sidewall passivation.
- Variable stripe length analysis and segmented contact absorption measurements to determine internal loss.
- Comparison with shallow-ridge reference lasers.
Main Results:
- Demonstration of green-wavelength (524 nm) III-Nitride laser diodes under pulsed electrical injection.
- Deep-ridge lasers showed significantly reduced internal loss from 35 cm-1 to 21 cm-1 compared to shallow-ridge lasers.
- Improved lateral carrier confinement and porous etch selectivity contributed to lower optical loss.
- Quasi-continuous-wave operation was achieved.
Conclusions:
- Deeply etched ridge waveguides combined with ALD passivation effectively enhance the performance of green-emitting III-Nitride laser diodes.
- Significant reduction in internal optical loss is achievable through optimized waveguide design and passivation.
- Further epitaxial improvements are necessary to overcome high threshold current density and low injection efficiency for practical applications.
Related Concept Videos
01:21G-Protein Gated Ion Channels
GPCRs are primarily responsible for our sense of smell, taste, and vision. The binding of a sensory stimulus activates GPCR to stimulate effector proteins, many of which are ion channels in the sensory organs. GPCRs modulate the opening and closing of the target ion channels either directly by binding them, or by releasing second messengers that activate these channels. As ions move across the membrane, the membrane potential is altered, which induces an appropriate response.
Sensory organs,...
Sensory organs,...
01:16Biasing of P-N Junction
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
01:22MOSFET: Enhancement Mode
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...