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High-power evanescently coupled waveguide MUTC-PDs for low-phase-noise microwave generation.

Han Wen, Zhibiao Hao, Bing Xiong

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    |December 19, 2025
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    We developed waveguide-coupled uni-traveling carrier photodiodes (WG-MUTC-PDs) with high output power. These photodiodes overcome speed, efficiency, and power limitations in photodetector (PD) technology.

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    Area of Science:

    • Optoelectronics
    • Semiconductor Devices
    • Photonics

    Background:

    • Photodetectors (PDs) face trade-offs between speed, efficiency, and output power.
    • Uni-traveling carrier photodiodes (UTC-PDs) offer improved speed-power performance but can be limited by coupling efficiency and saturation.

    Purpose of the Study:

    • To demonstrate evanescently coupled waveguide modified uni-traveling carrier photodiodes (WG-MUTC-PDs) with enhanced output power and overcome traditional PD limitations.
    • To optimize device structures for maximized power handling, bandwidth, and responsivity.

    Main Methods:

    • Investigated a cliff layer with optimized doping for power handling and transit-time bandwidth.
    • Designed a waveguide layer with optimized refractive index for efficient evanescent coupling.
    • Utilized optoelectronic collaborative simulation to analyze carrier behavior and saturation characteristics.
    • Fabricated and characterized the WG-MUTC-PDs for bandwidth, responsivity, RF power, AM-to-PM conversion, and phase noise.

    Main Results:

    • Achieved a 3-dB bandwidth of 147 GHz.
    • Obtained an external responsivity of 0.492 A/W.
    • Demonstrated a saturated RF power of 3.09 dBm at 100 GHz.
    • Maintained low amplitude-to-phase (AM-to-PM) conversion coefficients (<1 degree) across a photocurrent range of 1-11 mA.
    • Evaluated residual phase noise in a photonic-based microwave generation system.

    Conclusions:

    • The proposed WG-MUTC-PD structure effectively overcomes the traditional speed-efficiency-power trade-offs in photodetectors.
    • The optimized design enables high RF output power and maximum optical-to-electrical external responsivity.
    • This work presents a significant advancement for photonic-based microwave generation systems.