Doping-induced magnetic phase transition enables all-electrical spin control in CrSBr

Area of Science:

• Condensed Matter Physics
• Materials Science
• Nanotechnology

Background:

• Van der Waals antiferromagnetic semiconductors offer potential for low-power spintronics.
• Challenges include intrinsic spin degeneracy and limited electrical spin control.

Purpose of the Study:

• To present a novel spintronic platform using CrSBr for electrical control of magnetism.
• To demonstrate a reversible antiferromagnetic to ferromagnetic phase transition via carrier doping.

Main Methods:

• Utilized gate-controlled intercalation to induce carrier doping in CrSBr.
• Engineered CrSBr/graphene heterostructures to exploit interfacial charge transfer.
• Investigated electrical switching of magnetic order using spin-transfer torque.

Main Results:

• Achieved reversible, zero-field magnetic phase transition in CrSBr.
• Demonstrated lateral spin valves with gate-controlled spin polarization reversal.
• Showcased electrical switching of magnetic order at ultralow current densities (<10^3 A/cm^2).

Conclusions:

• Established a new paradigm for reconfigurable, all-electrical spintronic systems.
• Highlighted the potential of van der Waals antiferromagnetic semiconductors for advanced spintronics.
• Confirmed the efficiency and device compatibility of the proposed mechanism.