Related Experiment Video
Updated: Jan 8, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Wafer-scale CMOS foundry silicon-on-insulator devices for integrated temporal pulse compression
Ju Won Choi1, Kenny Y K Ong1, Masaki Kato2
1Photonics Devices and Systems Group, Singapore University of Technology and Design, 8 Somapah Rd., Singapore 487372, Singapore.
Abstract:
Optical pulses are essential as information carriers, for driving nonlinear light sources, imaging, the study of attosecond science and 3D printing. In many applications, short pulses are needed. For example, the resolution of imaging methods which utilize short pulses is limited by the temporal width of the pulses, as is the capacity of time division multiplexed data. The temporal compression of optical pulses is an important approach to achieving ultrashort pulses. With the widespread proliferation of silicon photonics and their use in a multitude of applications, an integrated, CMOS-compatible approach for pulse compression would allow its seamless integration with other photonic integrated circuits. In this work, we experimentally demonstrate silicon-based pulse compression fabricated in a CMOS foundry. The first technique utilizes two stages, one for generating self-phase modulation through the Kerr nonlinearity in silicon, and the second for temporal synchronization of the new wavelengths. The second technique leverages Bragg soliton-effect temporal compression. We experimentally demonstrate temporal compression of up to 3.6× and good agreement with numerical calculations. This work represents efficient silicon-on-insulator devices for temporal compression realized using a wafer-scale CMOS foundry process and may therefore be mass manufactured and integrated seamlessly with other photonic and electronic circuits.
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
MOSFET Amplifiers
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...

