Related Experiment Video
Updated: Jan 8, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Ultranarrow polaritonic cavities formed by one-dimensional junctions of two-dimensional in-plane heterostructures
Seojoo Lee1,2, Ji-Hun Kang3,4,5
1School of Applied and Engineering Physics, Cornell University, Ithaca, NY 13853, USA.
Abstract:
We propose two-dimensional (2D) in-plane heterostructures, composed of a 2D crystal adjoining a perfect electric conductor (PEC) plane, that enable ultranarrow polaritonic resonant cavities. Specifically, we theoretically investigate the interaction of 2D surface polaritons (2DSPs) with the junction between the 2D crystal and a PEC plane. We reveal that when 2DSPs are strongly confined, the reflected 2DSPs experience a phase shift of 3π/4, which exhibits π/2 deviation from the so-called edge reflection value. This non-trivial phase shift is shown to play a crucial role in enabling resonant cavities whose size can be far smaller than the wavelength of the 2DSPs. Furthermore, we demonstrate that the spatial dimensionality of our heterostructure allows a direct mapping to metasurface-based heterostructures, where the 2D crystal is replaced by a metasurface supporting spoof surface polaritons (SSPs). This correspondence extends the feasibility of our concept to SSP-based resonators and broadens the accessible frequency range into the terahertz and microwave regimes. Our work provides not only deeper insight into low-dimensional polariton optics but also a design strategy for ultracompact polaritonic metaresonators.
Related Concept Videos
P-N junction
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Standing Waves in a Cavity
Dielectric Polarization in a Capacitor

