Related Experiment Video
Updated: Jan 8, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Phase-engineered 1T'/2H-MoS2 heterophase junctions for high-performance aqueous zinc-ion batteries
Xue-Wei Lu1, Xuetao Li1, Ruxuan Chen1
1Key Laboratory of Power Station Energy Transfer Conversion and System of Ministry of Education and School of Energy Power and Mechanical Engineering, and Beijing Laboratory of New Energy Storage Technology, North China Electric Power University, Beijing, 102206, China. 50202891@ncepu.edu.cn.
Abstract:
The development of high-performance aqueous zinc-ion battery (AZIB) cathodes requires materials that combine efficient ion transport with structural stability. While conventional layered transition metal dichalcogenides (TMDs), represented by two-dimensional (2D) molybdenum disulfide (MoS2), possess ideal diffusion channels, their semiconducting 2H phase suffers from limited interlayer spacing, poor hydrophilicity, and low electrical conductivity, hindering efficient Zn2+ storage. Here, we report a one-step synthesis of 2D 1T'/2H-MoS2 heterophase junctions via a thermal evaporation strategy, leveraging potassium-assisted phase engineering to stabilize the metastable 1T' phase. The hybrid-phase structure expands the layer spacing (from 0.62 to 0.80 nm), enhances the electronic conductivity, facilitates ion transport, maximizes active sites, and improves hydrophilicity, enabling superior Zn2+ diffusion kinetics. Electrochemical tests demonstrate that the 1T'/2H-MoS2 cathode delivers a high specific capacity (150 mAh g-1 at 1 A g-1), excellent rate capability (120 mAh g-1 at 2.0 A g-1), and exceptional cycling stability (86.4% capacity retention after 2000 cycles). Ex situ spectroscopic and microscopic analyses reveal a reversible Zn2+ insertion/extraction mechanism accompanied by dynamic phase transitions and lattice breathing. Density functional theory (DFT) calculations further confirm that the 1T' phase significantly enhances Zn2+ adsorption and reduces diffusion barriers. This work provides a novel strategy for designing phase-engineered TMDs as high-performance AZIB cathodes, paving the way for next-generation energy storage systems.
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

