Related Experiment Video
Updated: Jan 8, 2026

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
Element doping-driven band regulation toward stable 4.5 V sodium-ion layered oxides
Keyu Pan1, Hailong Yang1, Xiufang Zheng1
1Center of Advanced Electrochemical Energy, Institute of Advanced Interdisciplinary Studies, School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 401331, China.
None:
P2-type layered oxide cathode materials have garnered significant attention as promising candidates for sodium-ion batteries due to their high specific capacity, competitive energy density, robust structural stability, and straightforward synthesis. However, their practical deployment at high operating voltages is largely hindered by issues such as severe phase transitions and irreversible oxygen release. In this study, we introduce a simple and cost-efficient single-element doping approach to modulate the electronic and structural properties of the cathode. Doping effectively shifts the oxygen p-band center, modifies the local coordination environment of transition metals, enhances TM-O bonding, and stabilizes the octahedral framework. This synergistic mechanism suppresses Jahn-Teller distortions and improves the reversibility of anionic redox reactions. Consequently, the structural and interfacial integrity of the cathode is maintained over prolonged cycling, while additional charge compensation alleviates capacity degradation. As a result, the capacity retention is markedly enhanced from 23.4% to 69.3% after 300 cycles. The proposed doping strategy, combined with the elucidation of the mechanism and the structure-activity relationship of doping, provides valuable insights for the rational design and optimization of high-voltage layered oxide cathodes for sodium-ion batteries.
More Related Videos
Related Concept Videos
Energy Bands in Solids
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Ionic Bonding and Electron Transfer
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

