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Author Spotlight: Real-Time Imaging of Bonding in 3D-Printed Layers
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Three-Dimensional Heterogeneous Bonding for High-Density and Low-Noise TMR Sensing Arrays.

Zi'ang Han1,2, Zhenhu Jin1,2, Chenglong Zhang1

  • 1State Key Laboratory of Transducer Technology, Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing, China.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|December 26, 2025
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Summary

This study introduces a 3D bonding technique to double magnetic tunnel junction density in sensors without increasing chip size. This method effectively suppresses low-frequency noise, enhancing magnetic sensing capabilities for data-intensive applications.

Keywords:
high‐density magnetic sensing arrayslow‐frequency 1/f noise suppressionmagnetoresistance enhancementthree‐dimensional heterogeneous integration bondingtunneling magnetoresistance sensorswafer‐level bonding and etching optimization

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Area of Science:

  • Spintronics
  • Materials Science
  • Nanotechnology

Background:

  • Tunneling magnetoresistance (TMR) devices are vital for high-density, low-power magnetic sensing.
  • Increasing data demands necessitate advancements in sensor technology.

Purpose of the Study:

  • To present a novel three-dimensional heterogeneous integration bonding technique for TMR sensors.
  • To enhance TMR sensor integration and reduce low-frequency 1/f noise.

Main Methods:

  • Vertically bonding two TMR film stacks using a Cr/Au bonding layer.
  • Optimizing sputtering parameters, argon-ion activation, and bonding pressure.
  • Fabricating double-layer TMR devices via backside silicon removal, photolithography, and ion-beam etching with a 45° angle.

Main Results:

  • Achieved a void ratio of only 0.73% in the bonding layer.
  • Increased the magnetoresistance ratio from 149% to 172%.
  • Reduced magnetic noise to 0.97 nT·Hz-1/2 at 1 Hz.

Conclusions:

  • The 3D heterogeneous bonding strategy enables high integration and low noise in TMR sensors without altering device dimensions.
  • This approach significantly suppresses 1/f noise and doubles tunnel junction count.
  • The technique holds strong potential for high-density magnetic-sensing arrays and next-generation spintronic devices.