Related Experiment Video
Updated: Jan 7, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Staggered Heterojunction and Morphology Modulation Enabling High-Performance NIR Phototransistors
Kun Kang1, Huijuan Ran2, Jian-Yong Hu1
1Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, P. R. China.
None:
Near-infrared (NIR) organic phototransistors (OPTs) have broad application prospects in night vision, wearable health monitoring, intelligent security, and autonomous driving. This study proposes a material design strategy based on diketopyrrolopyrrole (DPP) donor-acceptor copolymers. Two ultra-narrow bandgap polymers, DPP-BT and DPP-BTT, are synthesized via Stille coupling and blended with DPPT-TT to form the active layer. Both copolymers exhibit narrow bandgaps and extended absorption beyond 1200 nm. The devices demonstrate excellent photoelectric conversion performance under 1300 nm illumination, with responsivity (R) values of 1.4 × 104 A/W for DPP-BT/DPPT-TT and 4.1 × 104 A/W for DPP-BTT/DPPT-TT, and specific detectivity (D*) values of 1.7 × 1012 and 2.8 × 1012 Jones, respectively. These results indicate a significant enhancement in photoresponse range and sensitivity. Further tests reveal that both blend systems maintain stable and superior detection performance across a broad spectral range from 500 to 2500 nm. This work provides an effective approach for optimizing the material and device synergy in NIR-OPTs, and lays a foundation for expanding the applications of polymer-based OPTs toward low-cost and large-area fabrication.
Related Concept Videos
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
P-N junction
Bipolar Junction Transistor
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Working Principle of BJT
In the PNP configuration, the emitter is heavily doped with positive charge carriers (holes), while the base is lightly doped with negative carriers (electrons). This setup allows for a forward bias across the emitter-base junction,...

