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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Jan 7, 2026

Flash Infrared Annealing for Perovskite Solar Cell Processing

Flash Infrared Annealing for Perovskite Solar Cell Processing

Published on: February 3, 2021

Customizing a Chemical and Field-Effect Passivation Strategy for Efficient and Durable Perovskite Solar Cells Using

Lin Fan^1,2, Lixue Wang¹, Chuanlong Bi¹

¹Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun, China.

Small (Weinheim an Der Bergstrasse, Germany)

|December 26, 2025

Summary

Black phosphorus-graphene oxide (BP-GO) composites enhance perovskite solar cell performance by controlling perovskite recrystallization. This strategy improves efficiency and stability by mitigating defects and optimizing charge transfer.

Keywords:

charge dynamics chemical and field‐effect passivation perovskite solar cells photovoltaic performance trap‐assisted charge recombination

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Last Updated: Jan 7, 2026

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Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices

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Published on: July 8, 2016

Area of Science:

Materials Science
Renewable Energy
Nanotechnology

Background:

Grain boundaries and interface defects in perovskite solar cells (PSCs) hinder efficiency and stability due to trap-assisted charge recombination.
Inorganic 2D/2D black phosphorus-graphene oxide (BP-GO) composites offer potential for passivation due to ultrafast charge transfer, high work function, and stability.

Purpose of the Study:

To propose and investigate a perovskite recrystallization strategy controlled by BP-GO.
To explore the synergistic mechanism of BP-GO in improving perovskite surface energy, band alignment, electric field, carrier dynamics, and photovoltaic performance via chemical and field-effect passivation (CFP).

Main Methods:

Perovskite recrystallization strategy controlled by BP-GO.
Theoretical and experimental analysis of BP-GO's influence on perovskite crystallization and CFP principles.
Fabrication and characterization of planar perovskite solar cells.

Main Results:

BP-GO controlled recrystallization significantly improves perovskite properties.
CFP effect of BP-GO enhances surface energy, optimizes band alignment, and improves electric field distribution.
Achieved a planar PSC with a power conversion efficiency of 25.17% and demonstrated excellent environmental, storage, and operational stabilities.

Conclusions:

BP-GO acts as an effective CFP material, synergistically enhancing perovskite optoelectronic device performance.
The study provides a scientific basis and low-temperature design strategy for CFP engineering using inorganic 2D/2D composites.
This approach is crucial for advancing the efficiency and stability of perovskite-based optoelectronic devices.