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Reversible Polymorph Switching in IV-VI Thin Films with Epitaxial Control and Birefringence Contrast.

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Nano Letters
|December 26, 2025
PubMed
Summary

We demonstrate a reversible phase transformation in lead tin selenide (PbSnSe) thin films, enabling tunable optoelectronic properties. This cyclable transformation between crystal structures is thermally driven and compatible with epitaxial integration.

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PbSnSeepitaxial thin filmmolecular beam epitaxyphase change semiconductor

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Area of Science:

  • Materials Science
  • Solid-State Physics
  • Semiconductor Research

Background:

  • Reversible polymorphic transformations are key for tuning semiconductor functionality.
  • Epitaxial integration of semiconductors is crucial for advanced optoelectronic devices.

Purpose of the Study:

  • To demonstrate a cyclable phase transformation in epitaxial lead tin selenide (PbSnSe) thin films.
  • To investigate the tunability of optoelectronic properties through structural phase transitions.

Main Methods:

  • Epitaxial growth of PbSnSe thin films on GaAs(001).
  • Thermal cycling experiments to induce and observe phase transformations.
  • Microstructural analysis using advanced imaging techniques.
  • Optical property measurements to quantify changes in birefringence.

Main Results:

  • Demonstrated reversible phase transformation between rocksalt cubic and layered orthorhombic structures in PbSnSe.
  • Transformation occurs between -60 and 150 °C, dependent on alloy composition.
  • Achieved a significant change in optical anisotropy (Δn > 1) due to symmetry change.
  • Observed coherent accommodation of lattice mismatch via low-energy interfaces.

Conclusions:

  • PbSnSe exhibits ultratunable semiconductor properties via reversible phase transformations.
  • The material is compatible with epitaxial integration for optoelectronic applications.
  • Further research needed to improve thermal cycling endurance and address defect accumulation.