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Updated: Jan 7, 2026
Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
ZnS Optoelectronic Synapses with Tunable Volatile and Nonvolatile Resistive Switching for Neuromorphic Learning
Hailong Li1, Zongjie Zhan1, Hao Sun1
1Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China.
None:
Artificial optoelectric synapses that integrate dual functions of memristor and a selector hold significant practical potential for developing next-generation high-density neuromorphic computing systems. Herein, an optoelectronic synaptic memristor based on ZnS is proposed, enabling reversible switching between long-time stable (>104 s) nonvolatile bipolar resistive switching characteristics (on/off ratio >105) and a tunable volatile self-rectifying mode (rectification ratio ranging in 45-104), thus functioning as integrated selector and memristor. The device realizes multilevel memory and effectively emulates diverse biological synaptic plasticity behaviors under electrical or near-infrared (808 and 980 nm) light stimulation, while also reproducing the brain-like Ebbinghaus "learning-forgetting-consolidation" rules. This work holds scientific significance for advancing the potential of devices with self-suppressing sneak current functionality in brain-inspired neuromorphic computing systems.
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