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Atomic Layer-by-Layer Lithography With Step-Terrace Topography Control via Selective Catalytic Reactions.

Qi Sun1, Sidong Wu1, Bingchun Jia1

  • 1State Key Laboratory of Fluid Power and Mechatronic Systems, Zhejiang University, Hangzhou, Zhejiang, China.

Small (Weinheim an Der Bergstrasse, Germany)
|December 29, 2025
PubMed
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This summary is machine-generated.

This study introduces atomic layer-by-layer lithography to precisely control surface topography, enabling atomic-scale precision for advanced semiconductor devices. The novel flow-bunching technique preserves step-terrace structures with single atomic layer accuracy.

Area of Science:

  • Materials Science
  • Surface Science
  • Nanotechnology

Background:

  • Atomic step-terrace topography is crucial for semiconductor device performance, influencing epitaxial growth and carrier transport.
  • Existing nanopatterning technologies struggle to achieve precise control over step-terrace topography.
  • Maintaining surface integrity at the atomic scale is essential for advanced electronics.

Purpose of the Study:

  • To propose and demonstrate a novel atomic layer-by-layer lithography method for precise topography control.
  • To achieve integrity and control of step-terrace topography using a new technique.
  • To enable extreme-precision patterning for advanced semiconductor devices.

Main Methods:

  • Developed a flow-bunching evolution process for atomic layer-by-layer lithography.
Keywords:
atomic layer‐by‐layer lithographyextreme‐precision manufacturingflow‐bunching evolutionselective catalytic reactionsstep‐terrace topographysurface integrity control

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  • Utilized catalytic etching with high selectivity based on terrace type and dangling bond number.
  • Applied pulse bias to a catalytically active probe on 4H-SiC (0001) under ambient conditions.

    • Main Results:

    • Demonstrated atomic layer-by-layer lithography preserving periodic step-terrace topography on 4H-SiC.
    • Verified perfect crystallographic order and no subsurface damage in etched regions using HAADF-STEM.
    • Achieved material removal control down to single Si-C atomic bilayer precision (approximately 2.5 Å).

    Conclusions:

    • The proposed flow-bunching evolution enables precise control of step-terrace topography at the atomic layer level.
    • This method offers a promising pathway for fabricating advanced semiconductor devices requiring extreme-precision patterning.
    • The technique preserves surface integrity, crucial for epitaxial growth and device functionality.