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High Photostrictive Strain Rate in Ferroelectric AlScN Thin Films.
Hui Li1, Shashidhara Acharya1, Jin Kyu Han1
1Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
Advanced Materials (Deerfield Beach, Fla.)
|December 30, 2025
Summary
Researchers achieved a breakthrough in photostriction, demonstrating a rapid strain rate in scandium aluminum nitride thin films. This fast light-induced strain opens new possibilities for non-contact optomechanical devices.
Area of Science:
- Materials Science
- Optoelectronics
- Solid State Physics
Background:
- Photostriction is a non-thermal strain effect induced by light via opto-electro-mechanical coupling.
- Conventional ferroelectric photostriction is limited by slow bulk photovoltaic effect (BPVE) timescales, hindering high-frequency applications.
Purpose of the Study:
- To demonstrate significantly enhanced photostrictive strain rates in ferroelectric thin films.
- To explore the potential of scandium aluminum nitride for fast optomechanical coupling.
Main Methods:
- Utilized scandium aluminum nitride (Al0.58Sc0.42N) thin films.
- Applied modulated continuous light excitation.
- Measured light-induced strain rates and amplitudes.
Main Results:
- Achieved a photostrictive strain rate of 3.6 s⁻¹, a substantial improvement over conventional methods.
- Demonstrated light-induced strain amplitude comparable to 2V electric-field induced strain.
- Attributed the fast response to nanoscale columnar domains reducing charge carrier transit distances.
Conclusions:
- Fast photostriction in AlScN enables high-frequency optomechanical actuation without electrical components.
- This advancement paves the way for novel non-contact acoustic micro-actuators and optomechanical systems.
