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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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Percolation-Limited Threshold Switching in Strain-Graded Mott Devices.

Utaek Cho1,2,3, Dong Kyu Lee1,2,4, Sungwon Lee1,2,3

  • 1Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.

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|December 30, 2025
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Summary
This summary is machine-generated.

Strain-graded vanadium dioxide (VO2) on platinum nanoislands lowers the nucleation barrier for faster, energy-efficient threshold switching. This promotes percolation-limited switching, enabling ultrafast device operation.

Keywords:
Mott switchmetal−insulator transitionneuronstrain gradientvanadium oxide

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Device Engineering

Background:

  • Vanadium dioxide (VO2) exhibits a field-driven insulator-to-metal transition crucial for threshold switching in emerging devices.
  • The intrinsic nucleation barrier of VO2's first-order phase transition leads to time delays, hindering energy-efficient operation.

Purpose of the Study:

  • To demonstrate strain-graded VO2 on platinum nanoislands (NIs) for enhanced threshold switching.
  • To promote nucleation and reduce incubation time for faster, more energy-efficient device performance.

Main Methods:

  • Fabrication of strain-graded VO2 epilayers on Pt NIs.
  • Analysis of voltage-triggered phase transitions and nucleation dynamics.
  • Characterization of strain distribution and its effect on activation energy.

Main Results:

  • Pt NIs locally disrupt lattice coherency, facilitating misfit strain energy relaxation.
  • Strain-graded VO2 lowers the nucleation barrier, reducing incubation time (τinc) by a factor of 20 compared to constantly strained films.
  • Percolation-limited switching stabilizes a metastable phase, enabling robust negative differential resistance and self-oscillatory behavior.

Conclusions:

  • Strain engineering in VO2 via Pt NIs effectively tailors phase transition dynamics.
  • This approach achieves ultrafast and energy-efficient switching, overcoming limitations of intrinsic nucleation barriers.
  • The findings pave the way for advanced, high-performance electronic devices.